This experiment is designed to calculate the energy band gap in the intrinsic region and the temperature dependence of the majority carrier mobility in the extrinsic region of semiconductors.
|Sample Results||Resistance versus temperature plot of carbon resistorResistivity versus temperature plot of GeResistance versus temperature plot of UJT|
|Version||9 November 2016, 2016-v2|
Further Readings and References
- Introduction to Solid State Physics John Wiley and Sons , C. Kittel 216 , (2005).
- An undergratuduate laboratory experiment for measuring the energy gap in semiconductors European Journal of Physics , A. Sconza and G. Torzo , 10 , (1989).
- An Introduction to Materials Engineering and Science New Jersey, John Wiley and Sons, Hoboken , B. S. Mitchell 550 , (2004).