The plasma etching is a dry etching process whereby the surface material is removed by plasma processes at low pressure. The PE-50 plasma cleaning system can use up to two gases simultaneously to clean and modify the surface. The type of the active gasses and their ratio is selected depending on the type of material to be etched. The optimum and uniform processing results are obtained when the gas flow rates are selected to maintain the vacuum in the plasma processing chamber in the range of 0.15 to 0.30 Torr. The RF power capability of the plasma etcher is 100 watts which is carefully chosen to avoid the excessive temperature rise in the sample being etched. Active ion species are accelerated towards the sample surface where the adsorption and desorption reaction takes place and the volatile reaction products are exhausted by the vacuum pump.
|Make and Manufacturer||Plasma Tech|
|Related Manuals||PE-50 Plasma Etcher Operational Manual|
|Contact Person||Ghulam Sarwar Butt|